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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 12.4mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.1 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 755 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN-Dual (3.3x3.3), Power33 |
| 包/箱: | 8-PowerVDFN |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
RCJ100N25TLROHM Semiconductor |
MOSFET N-CH 250V 10A LPT |
有存货: 854 $1.58000 |
 |
IPP80N06S2LH5AKSA2IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3-1 |
有存货: 38,000 $1.57000 |
 |
BSZ068N06NSATMA1IR (Infineon Technologies) |
BSZ068N06 - 12V-300V N-CHANNEL P |
有存货: 231,241 $0.36000 |
 |
IPB049NE7N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A D2PAK |
有存货: 1,618 $2.54000 |
 |
AUIRF7769L2TRIR (Infineon Technologies) |
MOSFET N-CH 100V 375A DIRECTFET |
有存货: 0 $8.55000 |
 |
SIHP24N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO220AB |
有存货: 856 $5.98000 |
 |
IRFF223 |
N-CHANNEL POWER MOSFET |
有存货: 1,395 $1.07000 |
 |
STW60NM50NSTMicroelectronics |
MOSFET N-CH 500V 68A TO247 |
有存货: 0 $18.83000 |
 |
IRFHS9301TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 6A/13A 6PQFN |
有存货: 12,989 $0.73000 |
 |
PMN42XPEAXNexperia |
MOSFET P-CH 20V 4A 6TSOP |
有存货: 0 $0.09483 |
