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FDD7N25LZTM

FDD7N25LZTM

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制造商部分
FDD7N25LZTM
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 250V 6.2A DPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2432
在线数据表
-
询问

Product Specifications

Type 描述
系列:UniFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):250 V
电流 - 连续漏极 (id) @ 25°c:6.2A (Tc)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:550mOhm @ 3.1A, 10V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:16 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:635 pF @ 25 V
场效应管特征:-
功耗(最大值):56W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:D-Pak
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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