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TW070J120B,S1Q

TW070J120B,S1Q

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制造商部分
TW070J120B,S1Q
制造商
Toshiba Electronic Devices and Storage Corporation
描述
SICFET N-CH 1200V 36A TO3P
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
273
在线数据表
-
询问

Product Specifications

Type 描述
系列:*
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:36A (Tc)
驱动电压(最大 rds on,最小 rds on):20V
rds on (max) @ id, vgs:90mOhm @ 18A, 20V
vgs(th) (最大值) @ id:5.8V @ 20mA
栅极电荷 (qg) (max) @ vgs:67 nC @ 20 V
vgs (最大值):±25V, -10V
输入电容 (ciss) (max) @ vds:1680 pF @ 800 V
场效应管特征:Standard
功耗(最大值):272W (Tc)
工作温度:-55°C ~ 175°C
安装类型:Through Hole
供应商设备包:TO-3P(N)
包/箱:TO-3P-3, SC-65-3

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