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TPN4R712MD,L1Q

TPN4R712MD,L1Q

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制造商部分
TPN4R712MD,L1Q
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CH 20V 36A 8TSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
6602
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVI
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:36A (Tc)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:4.7mOhm @ 18A, 4.5V
vgs(th) (最大值) @ id:1.2V @ 1mA
栅极电荷 (qg) (max) @ vgs:65 nC @ 5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:4300 pF @ 10 V
场效应管特征:-
功耗(最大值):42W (Tc)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-TSON Advance (3.3x3.3)
包/箱:8-PowerVDFN

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