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NTD3817N-1G

NTD3817N-1G

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制造商部分
NTD3817N-1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 16V 7.6A/34.5A IPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
14400
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):16 V
电流 - 连续漏极 (id) @ 25°c:7.6A (Ta), 34.5A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:13.9mOhm @ 15A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:10.5 nC @ 4.5 V
vgs (最大值):±16V
输入电容 (ciss) (max) @ vds:702 pF @ 12 V
场效应管特征:-
功耗(最大值):1.2W (Ta), 25.9W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:I-PAK
包/箱:TO-251-3 Short Leads, IPak, TO-251AA

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