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SSM3J35CT,L3F

SSM3J35CT,L3F

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制造商部分
SSM3J35CT,L3F
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CHANNEL 20V 100MA CST3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9700
在线数据表
-
询问

Product Specifications

Type 描述
系列:π-MOSVI
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:100mA (Ta)
驱动电压(最大 rds on,最小 rds on):1.2V, 4V
rds on (max) @ id, vgs:8Ohm @ 50mA, 4V
vgs(th) (最大值) @ id:1V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:12.2 pF @ 3 V
场效应管特征:-
功耗(最大值):100mW (Ta)
工作温度:150°C
安装类型:Surface Mount
供应商设备包:CST3
包/箱:SC-101, SOT-883

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