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NTMFS4833NAT1G

NTMFS4833NAT1G

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制造商部分
NTMFS4833NAT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 30V 16A/191A 5DFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
13500
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:16A (Ta), 191A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:1.9mOhm @ 30A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:150 nC @ 11.5 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:7.5 pF @ 12 V
场效应管特征:-
功耗(最大值):-
工作温度:-
安装类型:Surface Mount
供应商设备包:5-DFN (5x6) (8-SOFL)
包/箱:8-PowerTDFN

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