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SISH615ADN-T1-GE3

SISH615ADN-T1-GE3

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制造商部分
SISH615ADN-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET P-CH 20V 22.1A/35A PPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8005
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen III
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:22.1A (Ta), 35A (Tc)
驱动电压(最大 rds on,最小 rds on):2.5V, 10V
rds on (max) @ id, vgs:4.4mOhm @ 20A, 10V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:183 nC @ 10 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:5590 pF @ 10 V
场效应管特征:-
功耗(最大值):3.7W (Ta), 52W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PowerPAK® 1212-8SH
包/箱:PowerPAK® 1212-8SH

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