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2SK209-GR(TE85L,F)

2SK209-GR(TE85L,F)

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制造商部分
2SK209-GR(TE85L,F)
制造商
Toshiba Electronic Devices and Storage Corporation
描述
TRANS SJT N-CH 10MA SC59
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2955
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):-
电流 - 连续漏极 (id) @ 25°c:10mA (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:13 pF @ 10 V
场效应管特征:-
功耗(最大值):150mW (Ta)
工作温度:-55°C ~ 125°C (TA)
安装类型:Surface Mount
供应商设备包:SC-59
包/箱:TO-236-3, SC-59, SOT-23-3

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