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G3R350MT12J

G3R350MT12J

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制造商部分
G3R350MT12J
制造商
GeneSiC Semiconductor
描述
SIC MOSFET N-CH 11A TO263-7
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
664
在线数据表
-
询问

Product Specifications

Type 描述
系列:G3R™
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:11A (Tc)
驱动电压(最大 rds on,最小 rds on):15V
rds on (max) @ id, vgs:420mOhm @ 4A, 15V
vgs(th) (最大值) @ id:2.69V @ 2mA
栅极电荷 (qg) (max) @ vgs:12 nC @ 15 V
vgs (最大值):±15V
输入电容 (ciss) (max) @ vds:334 pF @ 800 V
场效应管特征:-
功耗(最大值):75W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-263-7
包/箱:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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