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TP0606N3-G

TP0606N3-G

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制造商部分
TP0606N3-G
制造商
Roving Networks / Microchip Technology
描述
MOSFET P-CH 60V 320MA TO92-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
557
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:320mA (Tj)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:3.5Ohm @ 750mA, 10V
vgs(th) (最大值) @ id:2.4V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:150 pF @ 25 V
场效应管特征:-
功耗(最大值):1W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-92-3
包/箱:TO-226-3, TO-92-3 (TO-226AA)

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