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XPN9R614MC,L1XHQ

XPN9R614MC,L1XHQ

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制造商部分
XPN9R614MC,L1XHQ
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CH 40V 40A 8TSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9057
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVI
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):40 V
电流 - 连续漏极 (id) @ 25°c:40A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:9.6mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.1V @ 500µA
栅极电荷 (qg) (max) @ vgs:64 nC @ 10 V
vgs (最大值):+10V, -20V
输入电容 (ciss) (max) @ vds:3000 pF @ 10 V
场效应管特征:-
功耗(最大值):840mW (Ta), 100W (Tc)
工作温度:175°C
安装类型:Surface Mount
供应商设备包:8-TSON Advance (3.3x3.6)
包/箱:8-PowerVDFN

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