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FDZ3N513ZT

FDZ3N513ZT

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制造商部分
FDZ3N513ZT
制造商
Fairchild (ON Semiconductor)
描述
MOSFET P-CH 30V 1.1A 4WLCSP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
25469
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:1.1A
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:462mOhm @ 300mA, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:1 nC @ 4.5 V
vgs (最大值):+5.5V, -300mV
输入电容 (ciss) (max) @ vds:85 pF @ 15 V
场效应管特征:Schottky Diode (Isolated)
功耗(最大值):1W (Ta)
工作温度:-55°C ~ 125°C (TJ)
安装类型:Surface Mount
供应商设备包:4-WLCSP (1x1)
包/箱:4-XFBGA, WLCSP

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