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IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

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制造商部分
IMW120R350M1HXKSA1
制造商
IR (Infineon Technologies)
描述
SICFET N-CH 1.2KV 4.7A TO247-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
160
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1.2 kV
电流 - 连续漏极 (id) @ 25°c:4.7A (Tc)
驱动电压(最大 rds on,最小 rds on):15V, 18V
rds on (max) @ id, vgs:455mOhm @ 2A, 18V
vgs(th) (最大值) @ id:5.7V @ 1mA
栅极电荷 (qg) (max) @ vgs:5.3 nC @ 18 V
vgs (最大值):+23V, -7V
输入电容 (ciss) (max) @ vds:182 pF @ 800 V
场效应管特征:-
功耗(最大值):60W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:PG-TO247-3-41
包/箱:TO-247-3

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