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| Type | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 100mOhm @ 8.4A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 37W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
IPP60R099CP |
MOSFET N-CH 600V 31A TO220-3-1 |
有存货: 0 $3.79000 |
 |
NTLJS4114NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.6A 6WDFN |
有存货: 498,666,000 $0.62000 |
 |
TK5Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A IPAK |
有存货: 1 $1.77000 |
 |
SIDR140DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 79A/100A PPAK |
有存货: 3,000 $2.58000 |
 |
APT5015SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A D3PAK |
有存货: 120 $11.24000 |
 |
FQPF5N80Fairchild (ON Semiconductor) |
MOSFET N-CH 800V 2.8A TO220F |
有存货: 610 $0.77000 |
 |
IPD60R520CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A TO252-3 |
有存货: 0 $0.81328 |
 |
SIS176LDN-T1-GE3Vishay / Siliconix |
N-CHANNEL 70 V (D-S) MOSFET POWE |
有存货: 50 $0.98000 |
 |
IPP60R099C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-3 |
有存货: 4,766 $6.57000 |
 |
IPD35N12S3L24ATMA1IR (Infineon Technologies) |
IPD35N12 - 120V-300V N-CHANNEL A |
有存货: 3,980 $0.41000 |
