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IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

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制造商部分
IPDD60R125G7XTMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 600V 20A HDSOP-10
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1608
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolMOS™ G7
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:20A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:125mOhm @ 6.4A, 10V
vgs(th) (最大值) @ id:4V @ 320µA
栅极电荷 (qg) (max) @ vgs:27 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:1080 pF @ 400 V
场效应管特征:-
功耗(最大值):120W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-HDSOP-10-1
包/箱:10-PowerSOP Module

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