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VN2210N2

VN2210N2

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制造商部分
VN2210N2
制造商
Roving Networks / Microchip Technology
描述
MOSFET N-CH 100V 1.7A TO39
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
26
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:1.7A (Tj)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:350mOhm @ 4A, 10V
vgs(th) (最大值) @ id:2.4V @ 10mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:500 pF @ 25 V
场效应管特征:-
功耗(最大值):360mW (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-39
包/箱:TO-205AD, TO-39-3 Metal Can

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