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BSD816SNH6327

BSD816SNH6327

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制造商部分
BSD816SNH6327
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 20V 1.4A SOT363-6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8281
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:1.4A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:160mOhm @ 1.4A, 2.5V
vgs(th) (最大值) @ id:950mV @ 3.7µA
栅极电荷 (qg) (max) @ vgs:600 pC @ 2.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:180 pF @ 10 V
场效应管特征:-
功耗(最大值):500mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-SOT363-6
包/箱:6-VSSOP, SC-88, SOT-363

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