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UF3C120150K4S

UF3C120150K4S

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制造商部分
UF3C120150K4S
制造商
UnitedSiC
描述
SICFET N-CH 1200V 18.4A TO247-4
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
460
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Cascode SiCJFET)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:18.4A (Tc)
驱动电压(最大 rds on,最小 rds on):12V
rds on (max) @ id, vgs:180mOhm @ 5A, 12V
vgs(th) (最大值) @ id:5.5V @ 10mA
栅极电荷 (qg) (max) @ vgs:25.7 nC @ 12 V
vgs (最大值):±25V
输入电容 (ciss) (max) @ vds:738 pF @ 100 V
场效应管特征:-
功耗(最大值):166.7W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247-4
包/箱:TO-247-4

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