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BSP149H6327XTSA1

BSP149H6327XTSA1

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制造商部分
BSP149H6327XTSA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 200V 660MA SOT223-4
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
17931
在线数据表
-
询问

Product Specifications

Type 描述
系列:SIPMOS®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:660mA (Ta)
驱动电压(最大 rds on,最小 rds on):0V, 10V
rds on (max) @ id, vgs:1.8Ohm @ 660mA, 10V
vgs(th) (最大值) @ id:1V @ 400µA
栅极电荷 (qg) (max) @ vgs:14 nC @ 5 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:430 pF @ 25 V
场效应管特征:Depletion Mode
功耗(最大值):1.8W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-SOT223-4
包/箱:TO-261-4, TO-261AA

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