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BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

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制造商部分
BSZ120P03NS3GATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET P-CH 30V 11A/40A 8TSDSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1786
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:11A (Ta), 40A (Tc)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:12mOhm @ 20A, 10V
vgs(th) (最大值) @ id:3.1V @ 73µA
栅极电荷 (qg) (max) @ vgs:45 nC @ 10 V
vgs (最大值):±25V
输入电容 (ciss) (max) @ vds:3360 pF @ 15 V
场效应管特征:-
功耗(最大值):2.1W (Ta), 52W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-TSDSON-8
包/箱:8-PowerTDFN

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