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RV2C010UNT2L

RV2C010UNT2L

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制造商部分
RV2C010UNT2L
制造商
ROHM Semiconductor
描述
MOSFET N-CH 20V 1A DFN1006-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1753
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:1A (Ta)
驱动电压(最大 rds on,最小 rds on):1.2V, 4.5V
rds on (max) @ id, vgs:470mOhm @ 500mA, 4.5V
vgs(th) (最大值) @ id:1V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:40 pF @ 10 V
场效应管特征:-
功耗(最大值):400mW (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:DFN1006-3 (VML1006)
包/箱:SC-101, SOT-883

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