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APTM120DA30CT1G

APTM120DA30CT1G

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制造商部分
APTM120DA30CT1G
制造商
Roving Networks / Microchip Technology
描述
MOSFET N-CH 1200V 31A SP1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
6827
在线数据表
-
询问

Product Specifications

Type 描述
系列:POWER MOS 8™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:31A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:360mOhm @ 25A, 10V
vgs(th) (最大值) @ id:5V @ 2.5mA
栅极电荷 (qg) (max) @ vgs:560 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:14560 pF @ 25 V
场效应管特征:-
功耗(最大值):657W (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
供应商设备包:SP1
包/箱:SP1

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