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IRLHM630TRPBF

IRLHM630TRPBF

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制造商部分
IRLHM630TRPBF
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 30V 21A/40A PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
16000
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:21A (Ta), 40A (Tc)
驱动电压(最大 rds on,最小 rds on):2.5V, 10V
rds on (max) @ id, vgs:3.5mOhm @ 20A, 4.5V
vgs(th) (最大值) @ id:1.1V @ 50µA
栅极电荷 (qg) (max) @ vgs:62 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:3170 pF @ 25 V
场效应管特征:-
功耗(最大值):2.7W (Ta), 37W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PQFN (3x3)
包/箱:8-VQFN Exposed Pad

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