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CSD13383F4T

CSD13383F4T

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制造商部分
CSD13383F4T
制造商
Texas Instruments
描述
MOSFET N-CH 12V 2.9A 3PICOSTAR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9786
在线数据表
-
询问

Product Specifications

Type 描述
系列:FemtoFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):12 V
电流 - 连续漏极 (id) @ 25°c:2.9A (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:44mOhm @ 500mA, 4.5V
vgs(th) (最大值) @ id:1.25V @ 250µA
栅极电荷 (qg) (max) @ vgs:2.6 nC @ 4.5 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:291 pF @ 6 V
场效应管特征:-
功耗(最大值):500mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:3-PICOSTAR
包/箱:3-XFDFN

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