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FDD306P

FDD306P

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制造商部分
FDD306P
制造商
Sanyo Semiconductor/ON Semiconductor
描述
POWER FIELD-EFFECT TRANSISTOR, 6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
22400
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Bulk
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):12 V
电流 - 连续漏极 (id) @ 25°c:6.7A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:28mOhm @ 6.7A, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:21 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:1.29 pF @ 6 V
场效应管特征:-
功耗(最大值):52W (Ta)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-252
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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