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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 195A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 170A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8970 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
IPB65R110CFDAATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A D2PAK |
有存货: 753 $7.20000 |
 |
FDMC6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11.5A/20A 8MLP |
有存货: 72 $0.83000 |
 |
TK17E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 800V 17A TO220 |
有存货: 20 $4.37000 |
 |
CSD19531Q5ATexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
有存货: 1,328 $1.89000 |
 |
BTS282ZE3180AATMA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 75,000 $2.07000 |
 |
BUZ30AHXKSA1IR (Infineon Technologies) |
PFET, 21A I(D), 200V, 0.13OHM, 1 |
有存货: 2,071 $0.69000 |
 |
FDB86569-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A D2PAK |
有存货: 610 $1.78000 |
 |
SQJA96EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
有存货: 1,648 $0.91000 |
 |
IPSA70R600P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO251-3 |
有存货: 319 $0.85000 |
 |
DMG3418L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
有存货: 0 $0.08184 |
