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IPN50R650CEATMA1

IPN50R650CEATMA1

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制造商部分
IPN50R650CEATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 500V 9A SOT223
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5871
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolMOS™ CE
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):500 V
电流 - 连续漏极 (id) @ 25°c:9A (Tc)
驱动电压(最大 rds on,最小 rds on):13V
rds on (max) @ id, vgs:650mOhm @ 1.8A, 13V
vgs(th) (最大值) @ id:3.5V @ 150µA
栅极电荷 (qg) (max) @ vgs:15 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:342 pF @ 100 V
场效应管特征:-
功耗(最大值):5W (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-SOT223
包/箱:SOT-223-3

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