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IRL80HS120

IRL80HS120

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制造商部分
IRL80HS120
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 80V 12.5A 6PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3504
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):80 V
电流 - 连续漏极 (id) @ 25°c:12.5A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:32mOhm @ 7.5A, 10V
vgs(th) (最大值) @ id:2V @ 10µA
栅极电荷 (qg) (max) @ vgs:7 nC @ 4.5 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:540 pF @ 25 V
场效应管特征:-
功耗(最大值):11.5W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:6-PQFN (2x2)
包/箱:6-VDFN Exposed Pad

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