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MSC080SMA120J

MSC080SMA120J

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制造商部分
MSC080SMA120J
制造商
Roving Networks / Microchip Technology
描述
SICFET N-CH 1.2KV 35A SOT227
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
99
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1.2 kV
电流 - 连续漏极 (id) @ 25°c:37A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):-
工作温度:-55°C ~ 175°C (TJ)
安装类型:Chassis Mount
供应商设备包:SOT-227 (ISOTOP®)
包/箱:SOT-227-4, miniBLOC

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