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SCT3120ALHRC11

SCT3120ALHRC11

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制造商部分
SCT3120ALHRC11
制造商
ROHM Semiconductor
描述
SICFET N-CH 650V 21A TO247N
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
322
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:21A (Tc)
驱动电压(最大 rds on,最小 rds on):18V
rds on (max) @ id, vgs:156mOhm @ 6.7A, 18V
vgs(th) (最大值) @ id:5.6V @ 3.33mA
栅极电荷 (qg) (max) @ vgs:38 nC @ 18 V
vgs (最大值):+22V, -4V
输入电容 (ciss) (max) @ vds:460 pF @ 500 V
场效应管特征:-
功耗(最大值):103W
工作温度:175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247N
包/箱:TO-247-3

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