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APT106N60B2C6

APT106N60B2C6

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制造商部分
APT106N60B2C6
制造商
Roving Networks / Microchip Technology
描述
MOSFET N-CH 600V 106A T-MAX
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolMOS™
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:106A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:35mOhm @ 53A, 10V
vgs(th) (最大值) @ id:3.5V @ 3.4mA
栅极电荷 (qg) (max) @ vgs:308 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:8390 pF @ 25 V
场效应管特征:-
功耗(最大值):833W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:T-MAX™ [B2]
包/箱:TO-247-3 Variant

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