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BSO200P03SHXUMA1

BSO200P03SHXUMA1

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制造商部分
BSO200P03SHXUMA1
制造商
IR (Infineon Technologies)
描述
MOSFET P-CH 30V 7.4A 8DSO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3921
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:7.4A (Ta)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:20mOhm @ 9.1A, 10V
vgs(th) (最大值) @ id:1.5V @ 100µA
栅极电荷 (qg) (max) @ vgs:54 nC @ 10 V
vgs (最大值):±25V
输入电容 (ciss) (max) @ vds:2330 pF @ 25 V
场效应管特征:-
功耗(最大值):1.56W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-DSO-8
包/箱:8-SOIC (0.154", 3.90mm Width)

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