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TPN22006NH,LQ

TPN22006NH,LQ

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制造商部分
TPN22006NH,LQ
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N-CH 60V 9A 8TSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
993
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVIII-H
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:9A (Ta)
驱动电压(最大 rds on,最小 rds on):6.5V, 10V
rds on (max) @ id, vgs:22mOhm @ 4.5A, 10V
vgs(th) (最大值) @ id:4V @ 100µA
栅极电荷 (qg) (max) @ vgs:12 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:710 pF @ 30 V
场效应管特征:-
功耗(最大值):700mW (Ta), 18W (Tc)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-TSON Advance (3.3x3.3)
包/箱:8-PowerVDFN

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