图片仅供参考，请联系我们获取真实图片
| Type | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 890W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268HV |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
STP28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A TO220 |
有存货: 375 $6.46000 |
 |
TPWR6003PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 150A 8DSOP |
有存货: 16,059 $2.92000 |
 |
FDD13AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 9 |
有存货: 1,000 $0.59000 |
 |
TSM4NB65CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 650V 4A TO252 |
有存货: 2,485 $0.74000 |
 |
FDPF18N20FT-GFairchild (ON Semiconductor) |
MOSFET N-CH 200V 18A TO220F |
有存货: 1,896 $0.63000 |
 |
DMTH6005LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 19.7A/100A PWRDI |
有存货: 4,000 $0.53192 |
 |
STD70N6F3STMicroelectronics |
MOSFET N-CH 60V 70A DPAK |
有存货: 0 $2.68000 |
 |
FQP6N25Fairchild (ON Semiconductor) |
MOSFET N-CH 250V 5.5A TO220-3 |
有存货: 1,189 $0.31000 |
 |
FDB088N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 120A D2PAK |
有存货: 557 $2.43000 |
 |
SI5441BDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
有存货: 833 $1.23000 |
