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IRFD123

IRFD123

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制造商部分
IRFD123
制造商
Harris Corporation
描述
MOSFET N-CH 100V 1.3A 4DIP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
40377
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:1.3A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:270mOhm @ 780mA, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:16 nC @ 10 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:360 pF @ 25 V
场效应管特征:-
功耗(最大值):-
工作温度:-
安装类型:Through Hole
供应商设备包:4-DIP, Hexdip, HVMDIP
包/箱:4-DIP (0.300", 7.62mm)

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