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STB11NM60FDT4

STB11NM60FDT4

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制造商部分
STB11NM60FDT4
制造商
STMicroelectronics
描述
MOSFET N-CH 600V 11A D2PAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3271
在线数据表
-
询问

Product Specifications

Type 描述
系列:FDmesh™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:11A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:450mOhm @ 5.5A, 10V
vgs(th) (最大值) @ id:5V @ 250µA
栅极电荷 (qg) (max) @ vgs:40 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:900 pF @ 25 V
场效应管特征:-
功耗(最大值):160W (Tc)
工作温度:-
安装类型:Surface Mount
供应商设备包:D2PAK
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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