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PSMN070-200P,127

PSMN070-200P,127

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制造商部分
PSMN070-200P,127
制造商
NXP Semiconductors
描述
MOSFET N-CH 200V 35A TO220AB
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2984
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:35A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:70mOhm @ 17A, 10V
vgs(th) (最大值) @ id:4V @ 1mA
栅极电荷 (qg) (max) @ vgs:77 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:4570 pF @ 25 V
场效应管特征:-
功耗(最大值):250W (Ta)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220AB
包/箱:TO-220-3

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