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AUIRL7766M2TR

AUIRL7766M2TR

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制造商部分
AUIRL7766M2TR
制造商
International Components Corp.
描述
MOSFET N-CH 100V 10A DIRECTFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
10751
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:10A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:10mOhm @ 31A, 10V
vgs(th) (最大值) @ id:2.5V @ 150µA
栅极电荷 (qg) (max) @ vgs:66 nC @ 4.5 V
vgs (最大值):±16V
输入电容 (ciss) (max) @ vds:5.305 pF @ 25 V
场效应管特征:-
功耗(最大值):2.5W (Ta), 62.5W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:DIRECTFET™ M4
包/箱:DirectFET™ Isometric M4

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