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SSM6J512NU,LF

SSM6J512NU,LF

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制造商部分
SSM6J512NU,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CH 12V 10A 6UDFNB
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1188
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVII
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):12 V
电流 - 连续漏极 (id) @ 25°c:10A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 8V
rds on (max) @ id, vgs:16.2mOhm @ 4A, 8V
vgs(th) (最大值) @ id:1V @ 1mA
栅极电荷 (qg) (max) @ vgs:19.5 nC @ 4.5 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:1400 pF @ 6 V
场效应管特征:-
功耗(最大值):1.25W (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-UDFNB (2x2)
包/箱:6-WDFN Exposed Pad

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