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SISS50DN-T1-GE3

SISS50DN-T1-GE3

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制造商部分
SISS50DN-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH 45V 29.7A/108A PPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5565
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):45 V
电流 - 连续漏极 (id) @ 25°c:29.7A (Ta), 108A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:2.83mOhm @ 15A, 10V
vgs(th) (最大值) @ id:2.3V @ 250µA
栅极电荷 (qg) (max) @ vgs:70 nC @ 10 V
vgs (最大值):+20V, -16V
输入电容 (ciss) (max) @ vds:4000 pF @ 20 V
场效应管特征:-
功耗(最大值):5W (Ta), 65.7W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PowerPAK® 1212-8S
包/箱:PowerPAK® 1212-8S

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