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TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ)

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制造商部分
TJ8S06M3L(T6L1,NQ)
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET P-CH 60V 8A DPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1998
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVI
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:8A (Ta)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:104mOhm @ 4A, 10V
vgs(th) (最大值) @ id:3V @ 1mA
栅极电荷 (qg) (max) @ vgs:19 nC @ 10 V
vgs (最大值):+10V, -20V
输入电容 (ciss) (max) @ vds:890 pF @ 10 V
场效应管特征:-
功耗(最大值):27W (Tc)
工作温度:175°C (TJ)
安装类型:Surface Mount
供应商设备包:DPAK+
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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