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SI2302DS,215

SI2302DS,215

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制造商部分
SI2302DS,215
制造商
NXP Semiconductors
描述
SMALL SIGNAL FIELD-EFFECT TRANSI
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
57446
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:2.5A (Tc)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:85mOhm @ 3.6A, 4.5V
vgs(th) (最大值) @ id:650mV @ 1mA
栅极电荷 (qg) (max) @ vgs:10 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:230 pF @ 10 V
场效应管特征:-
功耗(最大值):830mW (Tc)
工作温度:-65°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-236AB (SOT23)
包/箱:TO-236-3, SC-59, SOT-23-3

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