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PSMN8R5-100ESQ

PSMN8R5-100ESQ

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制造商部分
PSMN8R5-100ESQ
制造商
Nexperia
描述
POWER FIELD-EFFECT TRANSISTOR, 1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1501
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:100A (Tj)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:8.5mOhm @ 25A, 10V
vgs(th) (最大值) @ id:4V @ 1mA
栅极电荷 (qg) (max) @ vgs:111 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:5.512 pF @ 50 V
场效应管特征:-
功耗(最大值):263W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:I2PAK
包/箱:TO-262-3 Long Leads, I²Pak, TO-262AA

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