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IRFB42N20DPBF

IRFB42N20DPBF

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制造商部分
IRFB42N20DPBF
制造商
International Components Corp.
描述
CHANNEL
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5777
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:44A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:55mOhm @ 26A, 10V
vgs(th) (最大值) @ id:5.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:140 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:3.43 pF @ 25 V
场效应管特征:-
功耗(最大值):2.4W (Ta), 330W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220AB
包/箱:TO-220-3

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