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XPN6R706NC,L1XHQ

XPN6R706NC,L1XHQ

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制造商部分
XPN6R706NC,L1XHQ
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N-CH 60V 40A 8TSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9751
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVIII-H
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:40A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:6.7mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.5V @ 300µA
栅极电荷 (qg) (max) @ vgs:35 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:2000 pF @ 10 V
场效应管特征:-
功耗(最大值):840mW (Ta), 100W (Tc)
工作温度:175°C
安装类型:Surface Mount
供应商设备包:8-TSON Advance-WF (3.1x3.1)
包/箱:8-PowerVDFN

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