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ES6U42T2R

ES6U42T2R

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制造商部分
ES6U42T2R
制造商
ROHM Semiconductor
描述
MOSFET P-CH 20V 1A 6WEMT
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
0720
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Last Time Buy
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:1A (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:390mOhm @ 1A, 4.5V
vgs(th) (最大值) @ id:2V @ 1mA
栅极电荷 (qg) (max) @ vgs:2.1 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:150 pF @ 10 V
场效应管特征:Schottky Diode (Body)
功耗(最大值):700mW (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-WEMT
包/箱:SOT-563, SOT-666

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