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IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

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制造商部分
IMBF170R650M1XTMA1
制造商
IR (Infineon Technologies)
描述
SICFET N-CH 1700V 7.4A TO263-7
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
746
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1700 V
电流 - 连续漏极 (id) @ 25°c:7.4A (Tc)
驱动电压(最大 rds on,最小 rds on):12V, 15V
rds on (max) @ id, vgs:650mOhm @ 1.5A, 15V
vgs(th) (最大值) @ id:5.7V @ 1.7mA
栅极电荷 (qg) (max) @ vgs:8 nC @ 12 V
vgs (最大值):+20V, -10V
输入电容 (ciss) (max) @ vds:422 pF @ 1000 V
场效应管特征:-
功耗(最大值):88W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:-
供应商设备包:PG-TO263-7
包/箱:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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