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IPI80N06S2L05AKSA2

IPI80N06S2L05AKSA2

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制造商部分
IPI80N06S2L05AKSA2
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 55V 80A TO262-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
26500
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101, OptiMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):55 V
电流 - 连续漏极 (id) @ 25°c:80A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:4.8mOhm @ 80A, 10V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:230 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:5700 pF @ 25 V
场效应管特征:-
功耗(最大值):300W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:PG-TO262-3
包/箱:TO-262-3 Long Leads, I²Pak, TO-262AA

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