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FDP047AN08A0-F102

FDP047AN08A0-F102

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制造商部分
FDP047AN08A0-F102
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 75V 80A TO220-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9853
在线数据表
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Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Not For New Designs
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):75 V
电流 - 连续漏极 (id) @ 25°c:15A (Tc)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):310W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220-3
包/箱:TO-220-3

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